IRF7331PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Qualification Status :

Not Qualified

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

2 N-Channel (Dual)

Number of Terminations :

8

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Base Part Number :

IRF7331PBF

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

DS Breakdown Voltage-Min :

20V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

JEDEC-95 Code :

MS-012AA

Power Dissipation-Max (Abs) :

2W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HEXFET®

JESD-30 Code :

R-PDSO-G8

Input Capacitance (Ciss) (Max) @ Vds :

1340pF @ 16V

Power - Max :

2W

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

7A

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 4.5V

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

7A

Published :

2004

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Surface Mount :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.03Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR