IRF7329TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

3.9878mm

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

900mV @ 250μA

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 10V

Turn On Delay Time :

10 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

FET Type :

2 P-Channel (Dual)

Number of Terminations :

8

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

9.2A

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Factory Lead Time :

12 Weeks

Current Rating :

-9.2A

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

12V

Base Part Number :

IRF7329PBF

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

2W

Length :

4.9784mm

Turn-Off Delay Time :

340 ns

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Rise Time :

8.6ns

Transistor Element Material :

SILICON

Number of Pins :

8

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Fall Time (Typ) :

260 ns

Drain to Source Breakdown Voltage :

-12V

Rds On (Max) @ Id, Vgs :

17m Ω @ 9.2A, 4.5V

Height :

1.4986mm

Voltage - Rated DC :

-12V

Published :

2004

Drain-source On Resistance-Max :

0.017Ohm

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

8V