IRF7329PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

1.4986mm

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

8V

Element Configuration :

Dual

Power Dissipation :

2W

Transistor Application :

SWITCHING

FET Type :

2 P-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Number of Elements :

2

Termination :

SMD/SMT

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

12V

Max Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

8.6ns

Resistance :

17mOhm

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

340 ns

REACH SVHC :

No SVHC

Turn On Delay Time :

10 ns

Width :

3.9878mm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Dual Supply Voltage :

-12V

Length :

4.9784mm

Additional Feature :

High Reliability

Base Part Number :

IRF7329PBF

Fall Time (Typ) :

260 ns

Series :

HEXFET®

Lead Free :

Lead Free

Continuous Drain Current (ID) :

-9.2A

Vgs(th) (Max) @ Id :

900mV @ 250μA

Current - Continuous Drain (Id) @ 25°C :

9.2A

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

17m Ω @ 9.2A, 4.5V

Terminal Form :

Gull wing

Threshold Voltage :

-900mV

Factory Lead Time :

13 Weeks

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 4.5V

Nominal Vgs :

-900 mV

Mounting Type :

Surface Mount

Radiation Hardening :

No

Row Spacing :

6.3 mm

Drain to Source Breakdown Voltage :

-12V

Mount :

Surface Mount

Current Rating :

-9.2A

Number of Terminations :

8

Voltage - Rated DC :

-12V

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 10V

Packaging :

Tube