IRF7328TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

2675pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

-1V

Contact Plating :

Tin

Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

98 ns

Continuous Drain Current (ID) :

-8A

Termination :

SMD/SMT

Max Power Dissipation :

2W

Drain to Source Breakdown Voltage :

-30V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

8A

Additional Feature :

ULTRA LOW RESISTANCE

Mount :

Surface Mount

Published :

2004

Rise Time :

15ns

Length :

4.9784mm

Height :

1.75mm

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

8A

Dual Supply Voltage :

-30V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Width :

3.9878mm

Number of Pins :

8

Base Part Number :

IRF7328PBF

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

21m Ω @ 8A, 10V

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Current Rating :

-8A

Number of Channels :

2

Resistance :

21mOhm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Lead Free :

Lead Free

Turn-Off Delay Time :

198 ns

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Series :

HEXFET®

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

FET Type :

2 P-Channel (Dual)

Row Spacing :

6.3 mm

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

12 Weeks

Voltage - Rated DC :

-30V

Drain to Source Voltage (Vdss) :

30V

Element Configuration :

Dual

Recovery Time :

56 ns

Turn On Delay Time :

13 ns

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Nominal Vgs :

-2.5 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)