IRF7324TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Recovery Time :

270 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

20V

Rise Time :

36ns

Transistor Application :

SWITCHING

Voltage - Rated DC :

-20V

Element Configuration :

Dual

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 5V

Base Part Number :

IRF7324PBF

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

18m Ω @ 9A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

9A

ECCN Code :

EAR99

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2W

Number of Pins :

8

Mount :

Surface Mount

Resistance :

18mOhm

Published :

2004

Current Rating :

-9A

Radiation Hardening :

No

Series :

HEXFET®

JESD-609 Code :

e3

Fall Time (Typ) :

190 ns

Turn-Off Delay Time :

170 ns

Height :

1.75mm

Drain to Source Breakdown Voltage :

-20V

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

2940pF @ 15V

Turn On Delay Time :

17 ns

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

9A

Max Junction Temperature (Tj) :

150°C

Length :

4.9784mm

Continuous Drain Current (ID) :

-9A

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

12 Weeks

FET Feature :

Logic Level Gate

Threshold Voltage :

-1V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

8

Max Power Dissipation :

2W

Vgs(th) (Max) @ Id :

1V @ 250μA

Width :

3.9878mm

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

71A

FET Type :

2 P-Channel (Dual)

Lead Free :

Contains Lead, Lead Free