IRF7317TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel

Factory Lead Time :

12 Weeks

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Max Power Dissipation :

2W

Published :

1997

Avalanche Energy Rating (Eas) :

100 mJ

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Fall Time (Typ) :

49 ns

Number of Terminations :

8

Vgs(th) (Max) @ Id :

700mV @ 250μA

Nominal Vgs :

700 mV

Current - Continuous Drain (Id) @ 25°C :

6.6A 5.3A

Number of Elements :

2

Number of Pins :

8

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 15V

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Mount :

Surface Mount

Turn-Off Delay Time :

42 ns

Width :

3.9878mm

Drain to Source Breakdown Voltage :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Base Part Number :

IRF7317PBF

Resistance :

29mOhm

Current Rating :

6.6A

FET Feature :

Logic Level Gate

Lead Free :

Lead Free

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

12V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

29m Ω @ 6A, 4.5V

Threshold Voltage :

700mV

Height :

1.4986mm

ECCN Code :

EAR99

Length :

4.9784mm

Continuous Drain Current (ID) :

6.6A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

40ns