IRF7317TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

6.6A

Avalanche Energy Rating (Eas) :

100 mJ

Current Rating :

6.6A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Series :

HEXFET®

Base Part Number :

IRF7317PBF

Vgs(th) (Max) @ Id :

700mV @ 250μA

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Max Power Dissipation :

2W

Current - Continuous Drain (Id) @ 25°C :

6.6A 5.3A

Width :

3.9878mm

Terminal Finish :

Matte Tin (Sn)

Nominal Vgs :

700 mV

Radiation Hardening :

No

Transistor Application :

SWITCHING

Fall Time (Typ) :

49 ns

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Turn-Off Delay Time :

42 ns

Rds On (Max) @ Id, Vgs :

29m Ω @ 6A, 4.5V

Power Dissipation :

2W

REACH SVHC :

No SVHC

Rise Time :

40ns

Number of Elements :

2

Mount :

Surface Mount

Threshold Voltage :

700mV

Height :

1.4986mm

Transistor Element Material :

SILICON

FET Type :

N and P-Channel

Number of Pins :

8

Drain to Source Breakdown Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Resistance :

29mOhm

Mounting Type :

Surface Mount

Length :

4.9784mm

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 15V

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

12V

Published :

1997