IRF7317TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Factory Lead Time :

12 Weeks

Base Part Number :

IRF7317PBF

Radiation Hardening :

No

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

100 mJ

Length :

4.9784mm

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

29m Ω @ 6A, 4.5V

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Power Dissipation :

2W

Rise Time :

40ns

Number of Terminations :

8

Height :

1.4986mm

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

6.6A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

700mV @ 250μA

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

FET Type :

N and P-Channel

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mount :

Surface Mount

Resistance :

29mOhm

Mounting Type :

Surface Mount

Current Rating :

6.6A

Lead Free :

Lead Free

Nominal Vgs :

700 mV

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Threshold Voltage :

700mV

REACH SVHC :

No SVHC

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

42 ns

Width :

3.9878mm

Current - Continuous Drain (Id) @ 25°C :

6.6A 5.3A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 15V

Fall Time (Typ) :

49 ns

Max Power Dissipation :

2W

Published :

1997