IRF7316TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Rated DC :

-30V

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

140 mJ

Number of Terminations :

8

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

30A

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

58m Ω @ 4.9A, 10V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Length :

4.9784mm

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Max Junction Temperature (Tj) :

150°C

Turn On Delay Time :

13 ns

Continuous Drain Current (ID) :

-4.9A

Power Dissipation :

2W

Element Configuration :

Dual

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

4.9A

RoHS Status :

ROHS3 Compliant

FET Type :

2 P-Channel (Dual)

Resistance :

58mOhm

Threshold Voltage :

-1V

Contact Plating :

Tin

Series :

HEXFET®

Fall Time (Typ) :

32 ns

Nominal Vgs :

-1 V

Drain to Source Breakdown Voltage :

-30V

Number of Pins :

8

Mount :

Surface Mount

Published :

2004

Lead Free :

Contains Lead, Lead Free

Rise Time :

13ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

3.9878mm

FET Feature :

Logic Level Gate

Height :

1.75mm

Base Part Number :

IRF7316PBF

Radiation Hardening :

No

Max Power Dissipation :

2W

Recovery Time :

66 ns

Number of Channels :

2

Current Rating :

-4.9A

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Turn-Off Delay Time :

34 ns