IRF7309PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

MS-012AA

Power Dissipation-Max (Abs) :

1.4W

Terminal Position :

Dual

Packaging :

Tube

Power - Max :

1.4W

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

4A

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

16A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

FET Type :

N and P-Channel

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

8

Published :

2004

Package / Case :

8-SOIC (0.154, 3.90mm Width)

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

2

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.4A, 10V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.05Ohm

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Base Part Number :

IRF7309PBF

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

4A 3A

Additional Feature :

ULTRA LOW RESISTANCE

Mounting Type :

Surface Mount

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)