IRF7304TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

3.6A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Series :

HEXFET®

Recovery Time :

84 ns

Drain to Source Breakdown Voltage :

-20V

Mount :

Surface Mount

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-20V

Rise Time :

26ns

Mounting Type :

Surface Mount

Turn On Delay Time :

8.4 ns

Number of Terminations :

8

Terminal Form :

Gull wing

Number of Elements :

2

Height :

1.4986mm

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Length :

4.9784mm

Threshold Voltage :

-700mV

Published :

1997

Base Part Number :

IRF7304PBF

Current Rating :

-4.3A

Power Rating :

2W

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 15V

Number of Pins :

8

Turn-Off Delay Time :

51 ns

Power Dissipation :

2W

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

12V

Lead Free :

Contains Lead, Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-700 mV

Current - Continuous Drain (Id) @ 25°C :

4.3A

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Continuous Drain Current (ID) :

-4.3A

REACH SVHC :

No SVHC

Resistance :

90mOhm

Factory Lead Time :

12 Weeks

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

700mV @ 250μA

Width :

3.9878mm

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE

Fall Time (Typ) :

33 ns

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.2A, 4.5V