IRF7304TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

HEXFET®

Rise Time :

26ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Breakdown Voltage :

-20V

Radiation Hardening :

No

Power Rating :

2W

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

33 ns

Voltage - Rated DC :

-20V

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

FET Type :

2 P-Channel (Dual)

Number of Terminations :

8

Vgs(th) (Max) @ Id :

700mV @ 250μA

Published :

1997

Transistor Element Material :

SILICON

Element Configuration :

Dual

Power Dissipation :

2W

Length :

4.9784mm

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Recovery Time :

84 ns

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

3.6A

Threshold Voltage :

-700mV

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.2A, 4.5V

Drain to Source Voltage (Vdss) :

20V

Height :

1.4986mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-4.3A

REACH SVHC :

No SVHC

Number of Pins :

8

Turn On Delay Time :

8.4 ns

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Resistance :

90mOhm

Width :

3.9878mm

RoHS Status :

ROHS3 Compliant

Base Part Number :

IRF7304PBF

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

51 ns

Nominal Vgs :

-700 mV

Current - Continuous Drain (Id) @ 25°C :

4.3A

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

-4.3A

FET Feature :

Logic Level Gate

Max Power Dissipation :

2W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 15V