IRF7304

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

3.6A

JESD-30 Code :

R-PDSO-G8

Qualification Status :

Not Qualified

Additional Feature :

LOGIC LEVEL COMPATIBLE

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Mounting Type :

Surface Mount

FET Type :

2 P-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.2A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

4.3A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power - Max :

2W

Drain-source On Resistance-Max :

0.09Ohm

Terminal Finish :

Tin/Lead (Sn/Pb)

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 15V

Vgs(th) (Max) @ Id :

700mV @ 250μA

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.95

Peak Reflow Temperature (Cel) :

245

FET Feature :

Logic Level Gate

DS Breakdown Voltage-Min :

20V

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

1997

Transistor Element Material :

SILICON

Number of Terminations :

8

JESD-609 Code :

e0

Packaging :

Tube

Drain to Source Voltage (Vdss) :

20V