IRF7301TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

HEXFET®

Factory Lead Time :

12 Weeks

Current Rating :

5.2A

Resistance :

50mOhm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.6A, 4.5V

Width :

3.9878mm

Power Dissipation :

2W

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

9 ns

Nominal Vgs :

700 mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Row Spacing :

6.3 mm

Threshold Voltage :

700mV

Turn-Off Delay Time :

32 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.4986mm

Drain to Source Breakdown Voltage :

20V

Number of Pins :

8

Published :

1997

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Mount :

Surface Mount

Continuous Drain Current (ID) :

5.2A

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Contains Lead, Lead Free

Terminal Form :

Gull wing

Number of Elements :

2

Fall Time (Typ) :

51 ns

Base Part Number :

IRF7301PBF

Gate to Source Voltage (Vgs) :

12V

Additional Feature :

ULTRA LOW RESISTANCE

Length :

4.9784mm

Transistor Application :

SWITCHING

Recovery Time :

44 ns

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Number of Terminations :

8

Transistor Element Material :

SILICON

Max Power Dissipation :

2W

Vgs(th) (Max) @ Id :

700mV @ 250μA

Voltage - Rated DC :

20V

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Element Configuration :

Dual

Rise Time :

42ns

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V