IRF7105TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

13ns

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Published :

2003

Length :

4.9784mm

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

FET Type :

N and P-Channel

Additional Feature :

ULTRA LOW RESISTANCE

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

150°C

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

100m Ω @ 1A, 10V

Resistance :

100MOhm

Pulsed Drain Current-Max (IDM) :

14A

Turn-Off Delay Time :

45 ns

Current Rating :

3.5A

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

25V

Nominal Vgs :

3 V

Lead Free :

Lead Free

Base Part Number :

IRF7105PBF

Operating Temperature :

-55°C~150°C TJ

Height :

1.75mm

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 15V

Mount :

Surface Mount

Radiation Hardening :

No

Width :

3.9878mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

1V

Continuous Drain Current (ID) :

3.5A

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Channels :

2

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

Turn On Delay Time :

7 ns

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2W

Series :

HEXFET®

ECCN Code :

EAR99

Number of Elements :

2

Number of Pins :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Fall Time (Typ) :

37 ns