IRF5852TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

90mOhm @ 2.7A, 4.5V

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Number of Elements :

2

Continuous Drain Current (ID) :

2.7A

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

960mW

Packaging :

Tape and Reel (TR)

Power Dissipation :

960mW

Nominal Vgs :

1.25 V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package :

6-TSOP

Min Operating Temperature :

-55°C

Width :

1.5mm

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

RoHS Status :

RoHS Compliant

Termination :

SMD/SMT

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Element Configuration :

Dual

Power - Max :

960mW

Fall Time (Typ) :

2.4 ns

Number of Pins :

6

Dual Supply Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Threshold Voltage :

1.25V

Drain to Source Voltage (Vdss) :

20V

Length :

3mm

Rds On Max :

90 mΩ

Base Part Number :

IRF5852PBF

Turn-Off Delay Time :

15 ns

Turn On Delay Time :

6.6 ns

Drain to Source Resistance :

90mOhm

FET Feature :

Logic Level Gate

Height :

900μm

Published :

2010

Series :

HEXFET®

Drain to Source Breakdown Voltage :

20V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 15V

Lead Free :

Lead Free

Input Capacitance :

400pF

Max Operating Temperature :

150°C

Mount :

Surface Mount

Rise Time :

1.2ns

Current - Continuous Drain (Id) @ 25°C :

2.7A

Gate to Source Voltage (Vgs) :

12V