IRF510

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

19 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Package / Case :

TO-220-3

Power Dissipation-Max :

43W Tc

Drain Current-Max (Abs) (ID) :

5.6A

Rds On (Max) @ Id, Vgs :

540m Ω @ 3.4A, 10V

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

20A

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.54Ohm

Drain to Source Voltage (Vdss) :

100V

Surface Mount :

No

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e0

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Terminal Finish :

TIN LEAD

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

5.6A Tc

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant