IRF510PBF-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100 V

Gate Charge (Qg) (Max) @ Vgs :

8.3 nC @ 10 V

Transistor Polarity :

N-Channel

RoHS :

Details

Product Category :

MOSFET

Configuration :

Single

Operating Temperature :

-55°C ~ 175°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

5.6A (Tc)

Manufacturer :

Vishay

Transistor Type :

1 N-Channel

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Feature :

-

Channel Mode :

Enhancement

Product Status :

Active

Number of Channels :

1 Channel

Mounting Type :

Through Hole

Rise Time :

16 ns

Power Dissipation (Max) :

43W (Tc)

Product Type :

MOSFET

Base Product Number :

IRF510

Brand :

Vishay / Siliconix

Package / Case :

TO-220-3

Subcategory :

MOSFETs

Supplier Device Package :

TO-220AB

Minimum Operating Temperature :

- 55 C

Series :

-

Package :

Tube

Packaging :

Tube

Maximum Operating Temperature :

+ 175 C

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

540mOhm @ 3.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

180 pF @ 25 V