IRF510STRR

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Mfr.Part #
IRF510STRR
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 5.6A D2PAK
Stock
21,488
In Stock :
21,488

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
8.3nC @ 10V
Drain to Source Resistance :
540mOhm
Gate to Source Voltage (Vgs) :
20V
Height :
4.83mm
Continuous Drain Current (ID) :
5.6A
Width :
9.65mm
Number of Channels :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
5.6A Tc
Length :
10.67mm
Mounting Type :
Surface Mount
FET Type :
N-Channel
Max Operating Temperature :
175°C
Rds On Max :
540 mΩ
Operating Temperature :
-55°C~175°C TJ
Min Operating Temperature :
-55°C
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 25V
Power Dissipation-Max :
3.7W Ta 43W Tc
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Rise Time :
16ns
Supplier Device Package :
D2PAK
RoHS Status :
Non-RoHS Compliant
Input Capacitance :
180pF
Vgs(th) (Max) @ Id :
4V @ 250µA
Turn-Off Delay Time :
15 ns
Drain to Source Voltage (Vdss) :
100V
Turn On Delay Time :
6.9 ns
Rds On (Max) @ Id, Vgs :
540mOhm @ 3.4A, 10V
Fall Time (Typ) :
9.4 ns
Weight :
1.437803g
Mount :
Surface Mount
Datasheets
IRF510STRR
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF510STRR from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IRF510STRR pinout, IRF510STRR datasheet PDF, IRF510STRR amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF510STRR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF510STRR


N-Channel Tape & Reel (TR) 540mOhm @ 3.4A, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF510STRR Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 180pF @ 25V.This device conducts a continuous drain current (ID) of 5.6A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 540mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6.9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF510STRR Features


a continuous drain current (ID) of 5.6A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)


IRF510STRR Applications


There are a lot of Vishay Siliconix
IRF510STRR applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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