IRF510L

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

9.4 ns

Number of Channels :

1

Drain to Source Breakdown Voltage :

100V

Packaging :

Tube

Mounting Type :

Through Hole

Rds On Max :

540 mΩ

Turn On Delay Time :

6.9 ns

Drain to Source Voltage (Vdss) :

100V

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Width :

4.7mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Weight :

6.000006g

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Max Power Dissipation :

3.7W

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain to Source Resistance :

540mOhm

Max Operating Temperature :

175°C

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

TO-262-3

Length :

10.41mm

Rise Time :

16ns

Turn-Off Delay Time :

15 ns

Continuous Drain Current (ID) :

5.6A

Min Operating Temperature :

-55°C

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

5.6A Tc

Input Capacitance :

180pF

Rds On (Max) @ Id, Vgs :

540mOhm @ 3.4A, 10V

Height :

9.01mm

FET Type :

N-Channel