IRF520

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Mfr.Part #
IRF520
Manufacturer
Harris Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 9.2A TO220AB
Stock
1,331
In Stock :
1,331

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Manufacturer :
Harris Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
STripFET™ II
Turn Off Time-Max (toff) :
50ns
JEDEC-95 Code :
TO-220AB
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Avalanche Energy Rating (Eas) :
100 mJ
Base Part Number :
IRF5
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
40A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
100V
Qualification Status :
Not Qualified
Reach Compliance Code :
not_compliant
Additional Feature :
FAST SWITCHING
Drain-source On Resistance-Max :
0.27Ohm
Vgs (Max) :
±20V
ECCN Code :
EAR99
RoHS Status :
Non-RoHS Compliant
Packaging :
Tube
Pin Count :
3
Turn On Time-Max (ton) :
115ns
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
270m Ω @ 7A, 10V
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
10A
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 250µA
DS Breakdown Voltage-Min :
100V
Feedback Cap-Max (Crss) :
100 pF
Operating Temperature :
-55°C~175°C TJ
JESD-609 Code :
e3
Number of Terminations :
3
Mounting Type :
Through Hole
Package / Case :
TO-220-3
Power Dissipation-Max :
60W Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
Matte Tin (Sn)
JESD-30 Code :
R-PSFM-T3
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
460pF @ 25V
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IRF520
Introducing Transistors - FETs, MOSFETs - Single Harris Corporation IRF520 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:IRF5, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, IRF520 pinout, IRF520 datasheet PDF, IRF520 amp .Beyond Transistors - FETs, MOSFETs - Single Harris Corporation IRF520 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Harris Corporation IRF520


N-Channel Tube 270m Ω @ 7A, 10V ±20V 460pF @ 25V 22nC @ 10V 100V TO-220-3

IRF520 Description


A IRF520 enhancement-mode n-channel MOSFET. Image courtesy of Linear Systems. Figure 1 shows the structure of an n-channel enhancement-mode MOSFET. Figure 1. n-channel enhancement-mode MOSFET. A p-type substrate provides physical support for the device. Two heavily doped n-type regions make the source and drain.

 

 IRF520  APPLICATIONS

HIGH CURRENT.HIGH SPEEDSWITCHING

SOLENOID AND RELAY DRIVERS REGULATORS

DC-DC &DC-ACCONVERTERS

MOTOR CONTROL.AUDIOAMPLIFIERS

AUTOMOTIVE ENVIRONMENT(INJECTION ABSAIR-BAGLAMPDRIVERS,Etc.)

 

IRF520  Features


· TYPICALRDS(on)=0.23Ω

· AVALANCHE RUGGEDTECHNOLOGY

· 100% AVALANCHE TESTED

· REPETITIVE AVALANCHE DATAAT100°C LOWGATE CHARGE

· HIGH CURRENT CAPABILITY

· 175°C OPERATING TEMPERATURE

 

 

   


  

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