IRF520

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Position :

Single

Power Dissipation-Max :

60W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Feedback Cap-Max (Crss) :

100 pF

Additional Feature :

FAST SWITCHING

Pulsed Drain Current-Max (IDM) :

40A

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Turn Off Time-Max (toff) :

50ns

Base Part Number :

IRF5

Package / Case :

TO-220-3

Surface Mount :

No

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.27Ohm

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

Series :

STripFET™ II

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

270m Ω @ 7A, 10V

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Avalanche Energy Rating (Eas) :

100 mJ

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Drain Current-Max (Abs) (ID) :

10A

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Time-Max (ton) :

115ns

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

DS Breakdown Voltage-Min :

100V