IRF520
- Mfr.Part #
- IRF520
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 9.2A TO220AB
- Stock
- 1,331
- In Stock :
- 1,331
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- STripFET™ II
- Turn Off Time-Max (toff) :
- 50ns
- JEDEC-95 Code :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Base Part Number :
- IRF5
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 40A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Additional Feature :
- FAST SWITCHING
- Drain-source On Resistance-Max :
- 0.27Ohm
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Tube
- Pin Count :
- 3
- Turn On Time-Max (ton) :
- 115ns
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 7A, 10V
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 10A
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- DS Breakdown Voltage-Min :
- 100V
- Feedback Cap-Max (Crss) :
- 100 pF
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 60W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- Matte Tin (Sn)
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRF520

N-Channel Tube 270m Ω @ 7A, 10V ±20V 460pF @ 25V 22nC @ 10V 100V TO-220-3
IRF520 Description
A IRF520 enhancement-mode n-channel MOSFET. Image courtesy of Linear Systems. Figure 1 shows the structure of an n-channel enhancement-mode MOSFET. Figure 1. n-channel enhancement-mode MOSFET. A p-type substrate provides physical support for the device. Two heavily doped n-type regions make the source and drain.
IRF520 APPLICATIONS
HIGH CURRENT.HIGH SPEEDSWITCHING
SOLENOID AND RELAY DRIVERS REGULATORS
DC-DC &DC-ACCONVERTERS
MOTOR CONTROL.AUDIOAMPLIFIERS
AUTOMOTIVE ENVIRONMENT(INJECTION ABSAIR-BAGLAMPDRIVERS,Etc.)
IRF520 Features
· TYPICALRDS(on)=0.23Ω
· AVALANCHE RUGGEDTECHNOLOGY
· 100% AVALANCHE TESTED
· REPETITIVE AVALANCHE DATAAT100°C LOWGATE CHARGE
· HIGH CURRENT CAPABILITY
· 175°C OPERATING TEMPERATURE
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