IRF510STRRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

5.6A Tc

Width :

9.65mm

Drain to Source Breakdown Voltage :

100V

Number of Elements :

1

Number of Pins :

3

Max Operating Temperature :

175°C

Power Dissipation :

3.7W

Power Dissipation-Max :

3.7W Ta 43W Tc

Height :

4.83mm

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

540mOhm @ 3.4A, 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

6.9 ns

Continuous Drain Current (ID) :

5.6A

Element Configuration :

Single

Turn-Off Delay Time :

15 ns

Number of Channels :

1

Rise Time :

16ns

Supplier Device Package :

TO-263 (D2Pak)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Rds On Max :

540 mΩ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2016

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Weight :

1.437803g

Length :

10.67mm

Input Capacitance :

180pF

Factory Lead Time :

8 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Resistance :

540mOhm

Fall Time (Typ) :

9.4 ns

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

100V