IRF510STRLPBF
- Mfr.Part #
- IRF510STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 5.6A D2PAK
- Stock
- 23,209
- In Stock :
- 23,209
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 175°C
- Supplier Device Package :
- D2PAK
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Resistance :
- 540mOhm
- Turn-Off Delay Time :
- 15 ns
- Rise Time :
- 16ns
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 25V
- Number of Elements :
- 1
- Weight :
- 1.437803g
- Number of Channels :
- 1
- Input Capacitance :
- 180pF
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 540mOhm @ 3.4A, 10V
- Power Dissipation :
- 3.7W
- Power Dissipation-Max :
- 43W Tc
- Continuous Drain Current (ID) :
- 5.6A
- Number of Pins :
- 3
- Resistance :
- 540mOhm
- Length :
- 10.67mm
- Min Operating Temperature :
- -55°C
- Factory Lead Time :
- 8 Weeks
- Width :
- 9.65mm
- Published :
- 2016
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 5.6A Tc
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 8.3nC @ 10V
- Turn On Delay Time :
- 6.9 ns
- Vgs (Max) :
- ±20V
- Height :
- 4.83mm
- Fall Time (Typ) :
- 9.4 ns
- Rds On Max :
- 540 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IRF510STRLPBF
N-Channel Tape & Reel (TR) 540mOhm @ 3.4A, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF510STRLPBF Overview
A device's maximal input capacitance is 180pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5.6A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 540mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF510STRLPBF Features
a continuous drain current (ID) of 5.6A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRF510STRLPBF Applications
There are a lot of Vishay Siliconix
IRF510STRLPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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