IRF5852TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

90mOhm @ 2.7A, 4.5V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Rds On Max :

90 mΩ

Published :

2003

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Series :

HEXFET®

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

2.7A

Continuous Drain Current (ID) :

2.7A

Voltage - Rated DC :

20V

FET Feature :

Logic Level Gate

Number of Pins :

6

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 15V

Power - Max :

960mW

FET Type :

2 N-Channel (Dual)

Drain to Source Breakdown Voltage :

20V

Drain to Source Voltage (Vdss) :

20V

Current Rating :

2.7A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package :

6-TSOP

Max Power Dissipation :

960mW

Input Capacitance :

400pF

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Lead Free :

Contains Lead

Rise Time :

1.2ns

Packaging :

Tape and Reel (TR)