IRF5851TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel

Drain to Source Voltage (Vdss) :

20V

Mount :

Surface Mount

Dual Supply Voltage :

20V

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Length :

3mm

Resistance :

90mOhm

Threshold Voltage :

1.25V

Lead Free :

Lead Free

Height :

900μm

Rds On (Max) @ Id, Vgs :

90mOhm @ 2.7A, 4.5V

Power Dissipation :

960mW

Current - Continuous Drain (Id) @ 25°C :

2.7A 2.2A

Nominal Vgs :

1.25 V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package :

6-TSOP

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

2.7A

RoHS Status :

RoHS Compliant

Number of Pins :

6

Max Operating Temperature :

150°C

Input Capacitance :

400pF

Base Part Number :

IRF5851PBF

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Width :

1.5mm

Radiation Hardening :

No

Published :

2010

Drain to Source Resistance :

90mOhm

Termination :

SMD/SMT

Max Power Dissipation :

960mW

Rds On Max :

90 mΩ

Drain to Source Breakdown Voltage :

20V

Gate to Source Voltage (Vgs) :

12V

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Power - Max :

960mW