IRF5850TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

1.143mm

Gate to Source Voltage (Vgs) :

12V

FET Type :

2 P-Channel (Dual)

Current - Continuous Drain (Id) @ 25°C :

2.2A

Width :

1.75mm

Min Operating Temperature :

-55°C

Element Configuration :

Dual

Rds On Max :

135 mΩ

Supplier Device Package :

6-TSOP

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 15V

Drain to Source Voltage (Vdss) :

20V

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Turn On Delay Time :

8.3 ns

Published :

2005

Power Dissipation :

960mW

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Drain to Source Resistance :

220mOhm

Max Power Dissipation :

960mW

Continuous Drain Current (ID) :

-2.2A

Input Capacitance :

320pF

Number of Elements :

2

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

135mOhm @ 2.2A, 4.5V

Drain to Source Breakdown Voltage :

-20V

Turn-Off Delay Time :

31 ns

Vgs(th) (Max) @ Id :

1.2V @ 250µA

RoHS Status :

RoHS Compliant

Power - Max :

960mW

Max Operating Temperature :

150°C

Rise Time :

14ns

Length :

2.9972mm

Mounting Type :

Surface Mount

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Base Part Number :

IRF5850PBF

Fall Time (Typ) :

28 ns

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

2 (1 Year)