IRF5810

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

2.9A

Gate Charge (Qg) (Max) @ Vgs :

9.6nC @ 4.5V

Power - Max :

960mW

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.9A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

Current - Continuous Drain (Id) @ 25°C :

2.9A

JESD-609 Code :

e0

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN LEAD

JESD-30 Code :

R-PDSO-G6

Number of Terminations :

6

Packaging :

Tube

FET Feature :

Logic Level Gate

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Type :

2 P-Channel (Dual)

Series :

HEXFET®

Qualification Status :

Not Qualified

Surface Mount :

yes

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JEDEC-95 Code :

MO-193AA

Drain-source On Resistance-Max :

0.09Ohm

Mounting Type :

Surface Mount

Power Dissipation-Max (Abs) :

0.96W

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

Operating Temperature (Max) :

150°C

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 16V