DMN2400UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Length :

1.7mm

Element Configuration :

Dual

Package / Case :

SOT-563, SOT-666

Rds On (Max) @ Id, Vgs :

480m Ω @ 200mA, 5V

Fall Time (Typ) :

10.54 ns

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

13.74 ns

Transistor Element Material :

SILICON

Number of Elements :

2

Turn On Delay Time :

4.06 ns

Max Power Dissipation :

530mW

Width :

1.25mm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 16V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

0.5nC @ 4.5V

JESD-609 Code :

e3

Rise Time :

7.28ns

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Mounting Type :

Surface Mount

Terminal Form :

Flat

Lead Free :

Lead Free

Continuous Drain Current (ID) :

1.33A

Contact Plating :

Tin

REACH SVHC :

No SVHC

FET Type :

2 N-Channel (Dual)

Weight :

3.005049mg

Vgs(th) (Max) @ Id :

900mV @ 250μA

ECCN Code :

EAR99

Number of Pins :

6

Number of Terminations :

6

Drain to Source Voltage (Vdss) :

20V

Resistance :

500MOhm

Threshold Voltage :

900mV

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

600μm

Power Dissipation :

530mW

Packaging :

Digi-Reel®

Published :

2017

Gate to Source Voltage (Vgs) :

12V

Operating Mode :

ENHANCEMENT MODE