DMN2400UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Threshold Voltage :

900mV

Fall Time (Typ) :

10.54 ns

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

900mV @ 250μA

Max Power Dissipation :

530mW

Rds On (Max) @ Id, Vgs :

480m Ω @ 200mA, 5V

Power Dissipation :

530mW

Height :

600μm

Gate Charge (Qg) (Max) @ Vgs :

0.5nC @ 4.5V

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

20V

Element Configuration :

Dual

Number of Pins :

6

Rise Time :

7.28ns

Number of Elements :

2

Transistor Element Material :

SILICON

Turn-Off Delay Time :

13.74 ns

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

12V

Contact Plating :

Tin

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Pin Count :

6

Published :

2017

Resistance :

500MOhm

JESD-609 Code :

e3

Package / Case :

SOT-563, SOT-666

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Continuous Drain Current (ID) :

1.33A

Turn On Delay Time :

4.06 ns

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Length :

1.7mm

Weight :

3.005049mg

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 16V

ECCN Code :

EAR99

Mount :

Surface Mount

Number of Terminations :

6

Width :

1.25mm

RoHS Status :

ROHS3 Compliant

Packaging :

Digi-Reel®