DMN2041UFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Case Connection :

DRAIN

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

1.4W

JESD-30 Code :

S-PDSO-N6

Factory Lead Time :

6 Weeks

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

1.4W

Transistor Element Material :

SILICON

JESD-609 Code :

e4

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

713pF @ 10V

DS Breakdown Voltage-Min :

20V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 8V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Number of Terminations :

6

FET Feature :

Standard

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Package / Case :

6-UDFN Exposed Pad

Drain-source On Resistance-Max :

0.04Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

4.7A

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.2A, 4.5V

Published :

2015