DMN2016LHAB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

40.9 ns

Rds On (Max) @ Id, Vgs :

15.5mOhm @ 4A, 4.5V

Height :

600μm

Packaging :

Cut Tape (CT)

Factory Lead Time :

14 Weeks

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Rds On Max :

15.5 mΩ

Gate to Source Voltage (Vgs) :

12V

Element Configuration :

Dual

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

7.5A

Published :

2013

Supplier Device Package :

U-DFN2030-6

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Continuous Drain Current (ID) :

7.5A

Max Power Dissipation :

1.2W

Max Operating Temperature :

150°C

Fall Time (Typ) :

12 ns

Drain to Source Resistance :

30mOhm

Length :

2.05mm

Input Capacitance :

1.55nF

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

20V

FET Type :

2 N-Channel (Dual) Common Drain

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Mounting Type :

Surface Mount

Turn On Delay Time :

6.9 ns

Number of Pins :

6

Number of Channels :

2

Package / Case :

6-UDFN Exposed Pad

Rise Time :

15.5ns

Width :

3.05mm

Operating Temperature :

-55°C~150°C TJ

Power - Max :

1.2W

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 10V