DMN2016LFG-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Resistance :

18mOhm

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Turn On Delay Time :

2.6 ns

Base Part Number :

DMN2016L

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

18m Ω @ 6A, 4.5V

Transistor Application :

SWITCHING

Fall Time (Typ) :

46.8 ns

JESD-609 Code :

e4

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1472pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

84.5 ns

Transistor Element Material :

SILICON

JESD-30 Code :

S-PDSO-N5

Number of Channels :

2

Reference Standard :

AEC-Q101

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Max Power Dissipation :

770mW

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Factory Lead Time :

16 Weeks

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

High Reliability

Element Configuration :

Dual

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Drain to Source Voltage (Vdss) :

20V

Rise Time :

13.2ns

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

Package / Case :

8-PowerUDFN

Continuous Drain Current (ID) :

5.2A

Published :

2012

Number of Terminations :

5

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual) Common Drain