DMN2008LFU-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Power - Max :

1W

Package / Case :

6-UFDFN Exposed Pad

Terminal Form :

NO LEAD

Number of Elements :

2

Vgs(th) (Max) @ Id :

1.5V @ 250A

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.0096Ohm

Continuous Drain Current (ID) :

14.5A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

5.4m Ω @ 5.5A, 4.5V

Factory Lead Time :

17 Weeks

Number of Terminations :

6

FET Type :

2 N-Channel (Dual) Common Drain

Gate Charge (Qg) (Max) @ Vgs :

42.3nC @ 10V

JESD-30 Code :

R-PDSO-N6

ECCN Code :

EAR99

Max Power Dissipation :

1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

FET Feature :

Standard

DS Breakdown Voltage-Min :

20V

Published :

2013

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

JESD-609 Code :

e4

Input Capacitance (Ciss) (Max) @ Vds :

1418pF @ 10V