DMG5802LFX-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

13.43ns

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

15m Ω @ 6.5A, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

3.69 ns

Number of Elements :

2

Length :

5.1mm

Drain-source On Resistance-Max :

0.015Ohm

Drain to Source Voltage (Vdss) :

24V

Max Power Dissipation :

980mW

Mounting Type :

Surface Mount

Fall Time (Typ) :

22.45 ns

Power Dissipation :

980mW

Radiation Hardening :

No

Continuous Drain Current (ID) :

6.5A

Turn-Off Delay Time :

32.18 ns

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Published :

2013

Number of Terminations :

6

JESD-609 Code :

e4

Drain to Source Breakdown Voltage :

24V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1066.4pF @ 15V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Pins :

6

Height :

800μm

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

FET Type :

2 N-Channel (Dual) Common Drain

Package / Case :

6-VFDFN Exposed Pad

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

Width :

2.1mm

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

31.3nC @ 10V

Pin Count :

6