DMG564H20R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

250mV

Published :

2010

Width :

1.25mm

Number of Elements :

2

Number of Pins :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Saturation Voltage :

250mV

Current - Collector Cutoff (Max) :

500nA

Length :

2mm

Max Collector Current :

100mA

Package / Case :

6-SMD, Flat Leads

Base Part Number :

DMG564

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 30 @ 5mA 10V

Transistor Application :

SWITCHING

Max Power Dissipation :

150mW

HTS Code :

8541.21.00.95

Resistor - Emitter Base (R2) :

47k Ω, 10k Ω

Number of Terminations :

6

Max Breakdown Voltage :

50V

Factory Lead Time :

10 Weeks

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

4.7k Ω, 1k Ω

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

-100mA

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

Height :

600μm

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Additional Feature :

BUILT IN BIAS RESISITANCE RATIO 10

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Polarity :

NPN, PNP

Mount :

Surface Mount