DMG504010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

150mW

Current - Collector Cutoff (Max) :

100μA

Collector Emitter Voltage (VCEO) :

300mV

Package / Case :

6-SMD, Flat Leads

Transistor Application :

AMPLIFIER

Factory Lead Time :

10 Weeks

Operating Temperature :

150°C TJ

Number of Pins :

6

Length :

2mm

Polarity :

NPN, PNP

Transistor Element Material :

SILICON

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

NPN, PNP

Max Collector Current :

100mA

Gain Bandwidth Product :

150MHz

Mount :

Surface Mount

Max Breakdown Voltage :

50V

Height :

600μm

Collector Base Voltage (VCBO) :

60V

Packaging :

Cut Tape (CT)

RoHS Status :

RoHS Compliant

Transition Frequency :

150MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.21.00.75

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

hFE Min :

210

Width :

1.25mm

Power - Max :

150mW

ECCN Code :

EAR99

Element Configuration :

Dual

Number of Terminations :

6

Base Part Number :

DMG50401