DMG5640N0R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Length :

2mm

Package / Case :

6-SMD, Flat Leads

Max Collector Current :

100mA

Max Power Dissipation :

150mW

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

250mV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω

Number of Elements :

2

Resistor - Base (R1) :

4.7k Ω

Width :

1.25mm

Number of Pins :

6

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.95

Additional Feature :

BUILT IN BIAS RESISITANCE RATIO 10

Height :

600μm

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Transistor Element Material :

SILICON

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

DMG5640N

Published :

2010

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

RoHS Status :

RoHS Compliant

Continuous Collector Current :

-100mA

Mount :

Surface Mount

Reach Compliance Code :

Unknown

Factory Lead Time :

10 Weeks

Polarity :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA