DMG563H40R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT IN BIAS RESISITANCE RATIO 1

Mounting Type :

Surface Mount

Published :

2010

ECCN Code :

EAR99

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V / 20 @ 5mA 10V

Resistor - Emitter Base (R2) :

10k Ω, 5.1k Ω

Max Breakdown Voltage :

50V

Max Collector Current :

100mA

Polarity :

NPN, PNP

Factory Lead Time :

10 Weeks

Current - Collector Cutoff (Max) :

500nA

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Base Part Number :

DMG563

Element Configuration :

Dual

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Number of Pins :

5

RoHS Status :

RoHS Compliant

Continuous Collector Current :

-100mA

Package / Case :

5-SMD, Flat Leads

Max Power Dissipation :

150mW

Collector Emitter Voltage (VCEO) :

250mV

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

10k Ω, 510 Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Operating Temperature :

150°C

Number of Elements :

2

Collector Emitter Breakdown Voltage :

50V