DMG563H10R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

50V

Polarity :

NPN, PNP

Max Power Dissipation :

150mW

Base Part Number :

DMG563

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

1.25mm

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Number of Elements :

2

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Resistor - Emitter Base (R2) :

47k Ω, 10k Ω

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 30 @ 5mA 10V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

6-SMD (5 Leads), Flat Lead

Height :

600μm

Continuous Collector Current :

-100mA

Length :

2mm

Number of Pins :

5

Collector Emitter Voltage (VCEO) :

250mV

Transistor Application :

SWITCHING

Max Collector Current :

100mA

Element Configuration :

Dual

Factory Lead Time :

10 Weeks

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Resistor - Base (R1) :

47k Ω, 4.7k Ω

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Mount :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISITANCE RATIO 1