DMG563H10R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN, PNP

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

2

Max Power Dissipation :

150mW

Height :

600μm

Resistor - Emitter Base (R2) :

47k Ω, 10k Ω

Number of Pins :

5

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 30 @ 5mA 10V

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Factory Lead Time :

10 Weeks

Max Operating Temperature :

150°C

Additional Feature :

BUILT IN BIAS RESISITANCE RATIO 1

Resistor - Base (R1) :

47k Ω, 4.7k Ω

ECCN Code :

EAR99

Continuous Collector Current :

-100mA

Current - Collector Cutoff (Max) :

500nA

Element Configuration :

Dual

Length :

2mm

Width :

1.25mm

Max Collector Current :

100mA

Package / Case :

6-SMD (5 Leads), Flat Lead

Base Part Number :

DMG563

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Reach Compliance Code :

Unknown

Collector Emitter Voltage (VCEO) :

250mV

RoHS Status :

RoHS Compliant