DMG563010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN, PNP

Transistor Element Material :

SILICON

Resistor - Base (R1) :

10k Ω

Mount :

Surface Mount

Continuous Collector Current :

-100mA

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Number of Pins :

5

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

BUILT IN BIAS RESISITANCE RATIO 1

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

150mW

Transistor Application :

SWITCHING

Number of Terminations :

5

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

REACH SVHC :

Unknown

Package / Case :

6-SMD (5 Leads), Flat Lead

Published :

2010

Resistor - Emitter Base (R2) :

10k Ω

Number of Elements :

2

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

RoHS Status :

RoHS Compliant

Base Part Number :

DMG56301

Collector Emitter Voltage (VCEO) :

250mV

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V