DMG564010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

10k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Transistor Element Material :

SILICON

Polarity :

NPN, PNP

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

250mV @ 500µA, 10mA

Factory Lead Time :

10 Weeks

Additional Feature :

BUILT IN BIAS RESISITANCE RATIO 1

Reach Compliance Code :

Unknown

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

250mV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Resistor - Base (R1) :

10k Ω

HTS Code :

8541.21.00.95

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Mount :

Surface Mount

Package / Case :

6-SMD, Flat Leads

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

DMG56401

Number of Terminations :

6

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Collector Current :

100mA

Max Power Dissipation :

150mW

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PDSO-F6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transistor Application :

SWITCHING

hFE Min :

35