BSL215CL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET Type :

N and P-Channel

FET Feature :

Logic Level Gate

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

HTS Code :

8541.21.00.95

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.2V @ 3.7µA

Series :

OptiMOS™

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

0.73nC @ 4.5V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Base Part Number :

BSL215

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.14Ohm

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

140m Ω @ 1.5A, 4.5V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

6

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

1.5A

Input Capacitance (Ciss) (Max) @ Vds :

143pF @ 10V

Max Power Dissipation :

500mW

Number of Elements :

2

Published :

2013

Pbfree Code :

yes

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Feedback Cap-Max (Crss) :

9 pF

DS Breakdown Voltage-Min :

20V