BSL205NL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

419pF @ 10V

Fall Time (Typ) :

2.4 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rise Time :

2.9ns

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Power Dissipation :

500mW

Number of Elements :

2

Pin Count :

6

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1.2V @ 11µA

Number of Pins :

6

Series :

OptiMOS™

FET Feature :

Logic Level Gate

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Transistor Element Material :

SILICON

Base Part Number :

BSL205

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 4.5V

Max Power Dissipation :

500mW

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.05Ohm

Drain to Source Voltage (Vdss) :

20V

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Published :

2011

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.5A, 4.5V

Turn-Off Delay Time :

11 ns

Turn On Delay Time :

5.8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Continuous Drain Current (ID) :

2.5A

Number of Terminations :

6

Mounting Type :

Surface Mount