BSL207NH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

6

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

2.1A

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Rise Time :

2.8ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.07Ohm

Feedback Cap-Max (Crss) :

24 pF

Series :

Automotive, AEC-Q101, OptiMOS™

FET Type :

2 N-Channel (Dual)

Terminal Finish :

Matte Tin (Sn)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Elements :

2

Power - Max :

500mW

Vgs(th) (Max) @ Id :

1.2V @ 11µA

Input Capacitance (Ciss) (Max) @ Vds :

419pF @ 10V

Rds On (Max) @ Id, Vgs :

70m Ω @ 2.1A, 4.5V

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED

Published :

2013

Number of Terminations :

6

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

12V

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

500mW

Max Dual Supply Voltage :

20V

FET Feature :

Logic Level Gate, 2.5V Drive

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V