BSL211SP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.067Ohm

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.95

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

12.4nC @ 4.5V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.2V @ 25µA

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

18.8A

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

654pF @ 15V

Drain Current-Max (Abs) (ID) :

4.7A

Drain to Source Voltage (Vdss) :

20V

Pbfree Code :

yes

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

Surface Mount :

yes

Transistor Element Material :

SILICON

Power Dissipation-Max :

2W Ta

Published :

2001

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

67m Ω @ 4.7A, 4.5V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

26 mJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Current - Continuous Drain (Id) @ 25°C :

4.7A Ta

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

20V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

JESD-30 Code :

R-PDSO-G6