BSL211SP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

67m Ω @ 4.7A, 4.5V

JESD-30 Code :

R-PDSO-G6

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

4.7A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

654pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

12.4nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

26 mJ

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1.2V @ 25µA

Power Dissipation-Max :

2W Ta

Number of Terminations :

6

Published :

2001

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

Current - Continuous Drain (Id) @ 25°C :

4.7A Ta

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

RoHS Status :

Non-RoHS Compliant

Surface Mount :

yes

DS Breakdown Voltage-Min :

20V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Vgs (Max) :

±12V

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

18.8A

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Pin Count :

6

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.067Ohm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V