BSL207NL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Feedback Cap-Max (Crss) :

24 pF

Operating Temperature :

-55°C ~ 150°C (TJ)

DS Breakdown Voltage-Min :

20 V

Terminal Finish :

MATTE TIN

Series :

OptiMOS™

Subcategory :

FET General Purpose Power

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMAIBLE

JESD-30 Code :

R-PDSO-G6

Power - Max :

500mW

Transistor Element Material :

SILICON

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Feature :

Logic Level Gate

Number of Terminals :

6

Input Capacitance (Ciss) (Max) @ Vds :

419pF @ 10V

Mounting Type :

Surface Mount

Package :

Bulk

Manufacturer :

Infineon Technologies AG

Drain Current-Max (Abs) (ID) :

2.1 A

Vgs(th) (Max) @ Id :

1.2V @ 11µA

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

70mOhm @ 2.1A, 4.5V

Drain to Source Voltage (Vdss) :

20V

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

HTS Code :

8541.21.00.95

Number of Elements :

2

Supplier Device Package :

PG-TSOP6-6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

2.1A

FET Type :

2 N-Channel (Dual)

Terminal Form :

Gull wing

Package Shape :

RECTANGULAR

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Product Status :

Active

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.07 Ω

Pin Count :

6

Power Dissipation-Max (Abs) :

0.5 W

Terminal Position :

Dual