BSL205NH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Power - Max :

500mW

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G6

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Input Capacitance (Ciss) (Max) @ Vds :

419pF @ 10V

Feedback Cap-Max (Crss) :

24 pF

Terminal Finish :

Tin (Sn)

FET Feature :

Logic Level Gate, 4.5V Drive

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Max Power Dissipation :

500mW

Rise Time :

2.9ns

Mounting Type :

Surface Mount

Number of Elements :

2

FET Type :

2 N-Channel (Dual)

Published :

2013

Additional Feature :

AVALANCHE RATED

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101, OptiMOS™

Mount :

Surface Mount

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.5A, 4.5V

Lead Free :

Lead Free

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2.5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 4.5V

Drain-source On Resistance-Max :

0.05Ohm

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1.2V @ 11µA

Max Dual Supply Voltage :

20V