BSL202SNH6327XTSA1

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Mfr.Part #
BSL202SNH6327XTSA1
Manufacturer
Infineon Technologies
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET N-CH 20V 7.5A TSOP-6
Stock
16,322
In Stock :
16,322

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Power Dissipation :
2W
Number of Elements :
1
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Published :
2013
Terminal Position :
Dual
Drain-source On Resistance-Max :
0.022Ohm
Threshold Voltage :
950mV
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
8.7nC @ 10V
Max Dual Supply Voltage :
20V
RoHS Status :
ROHS3 Compliant
Pulsed Drain Current-Max (IDM) :
30A
Operating Mode :
ENHANCEMENT MODE
Series :
OptiMOS™
Number of Channels :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
22m Ω @ 7.5A, 4.5V
Height :
1.1mm
Turn-Off Delay Time :
18.9 ns
Terminal Form :
Gull wing
Halogen Free :
Halogen Free
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Factory Lead Time :
10 Weeks
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
1147pF @ 10V
Mount :
Surface Mount
Avalanche Energy Rating (Eas) :
30 mJ
ECCN Code :
EAR99
Number of Pins :
6
Number of Terminations :
6
Gate to Source Voltage (Vgs) :
12V
Turn On Delay Time :
8.26 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
27.5ns
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
1.2V @ 30µA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Mounting Type :
Surface Mount
Power Dissipation-Max :
2W Ta
Vgs (Max) :
±12V
Drain to Source Breakdown Voltage :
20V
Current - Continuous Drain (Id) @ 25°C :
7.5A Ta
Continuous Drain Current (ID) :
7.5A
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSL202SNH6327XTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Package / Case:SOT-23-6 Thin, TSOT-23-6, Number of Pins:6, Number of Terminations:6, Mounting Type:Surface Mount, BSL202SNH6327XTSA1 pinout, BSL202SNH6327XTSA1 datasheet PDF, BSL202SNH6327XTSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSL202SNH6327XTSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSL202SNH6327XTSA1


N-Channel Tape & Reel (TR) 22m Ω @ 7.5A, 4.5V ±12V 1147pF @ 10V 8.7nC @ 10V SOT-23-6 Thin, TSOT-23-6

BSL202SNH6327XTSA1 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 30 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1147pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7.5A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [18.9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 30A.A turn-on delay time of 8.26 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.As it is powered by 20V, it can support the maximum dual supply voltage.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 950mV.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).

BSL202SNH6327XTSA1 Features


the avalanche energy rating (Eas) is 30 mJ
a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 18.9 ns
based on its rated peak drain current 30A.
a threshold voltage of 950mV


BSL202SNH6327XTSA1 Applications


There are a lot of Infineon Technologies
BSL202SNH6327XTSA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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