BSL202SNL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

6

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-Channel

Feedback Cap-Max (Crss) :

60 pF

Current - Continuous Drain (Id) @ 25°C :

7.5A (Ta)

DS Breakdown Voltage-Min :

20 V

Terminal Position :

Dual

Number of Elements :

1

Technology :

MOSFET (Metal Oxide)

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

OptiMOS™2

Manufacturer :

Infineon Technologies AG

Package :

Bulk

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

Vgs(th) (Max) @ Id :

1.2V @ 30µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Supplier Device Package :

PG-TSOP6-6-6

Drain-source On Resistance-Max :

0.022 Ω

Rds On (Max) @ Id, Vgs :

22mOhm @ 7.5A, 4.5V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Gate Charge (Qg) (Max) @ Vgs :

8.7 nC @ 4.5 V

Subcategory :

FET General Purpose Power

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1147 pF @ 10 V

Vgs (Max) :

±12V

Surface Mount :

yes

Power Dissipation (Max) :

2W (Ta)

Pbfree Code :

yes

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

20 V

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

7.5 A

JESD-30 Code :

R-PDSO-G6

FET Feature :

-

Pin Count :

6

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

2 W

FET Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN