BSL214NL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

7.6ns

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

20V

Pin Count :

6

Max Power Dissipation :

500mW

Input Capacitance (Ciss) (Max) @ Vds :

143pF @ 10V

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMAIBLE

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Fall Time (Typ) :

1.4 ns

Number of Pins :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs(th) (Max) @ Id :

1.2V @ 3.7µA

FET Type :

2 N-Channel (Dual)

Number of Terminations :

6

RoHS Status :

RoHS Compliant

Feedback Cap-Max (Crss) :

9 pF

Continuous Drain Current (ID) :

1.5A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 5V

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Base Part Number :

BSL214

Turn On Delay Time :

4.1 ns

Drain-source On Resistance-Max :

0.14Ohm

HTS Code :

8541.21.00.95

Transistor Element Material :

SILICON

Radiation Hardening :

No

Turn-Off Delay Time :

6.8 ns

Rds On (Max) @ Id, Vgs :

140m Ω @ 1.5A, 4.5V

Series :

OptiMOS™

Pbfree Code :

yes

Terminal Form :

Gull wing

Published :

2013

Mount :

Surface Mount

Mounting Type :

Surface Mount