BFQ18A,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

18V

Surface Mount :

yes

Terminal Form :

Flat

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Power - Max :

1W

JESD-30 Code :

R-PSSO-F3

Power Dissipation-Max (Abs) :

1W

Reference Standard :

CECC

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

150mA

Pin Count :

3

Qualification Status :

Not Qualified

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 100mA 10V

Configuration :

Single

JESD-609 Code :

e3

Terminal Position :

Single

Frequency - Transition :

4GHz

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

BFQ18

Operating Temperature :

175°C TJ

Transistor Application :

AMPLIFIER

Published :

1997

Terminal Finish :

Tin (Sn)

Transition Frequency :

4000MHz

Number of Elements :

1

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN

HTS Code :

8541.29.00.75

Case Connection :

COLLECTOR

Package / Case :

TO-243AA

Highest Frequency Band :

S B

Power Dissipation Ambient-Max :

1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant