BFQ19SH6359XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Additional Feature :

LOW NOISE

Configuration :

Single

Package / Case :

TO-243AA

Noise Figure (dB Typ @ f) :

1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz

Reach Compliance Code :

Compliant

Manufacturer :

Infineon Technologies AG

Collector-Base Capacitance-Max :

1.35 pF

Factory Lead Time :

1 Week

Voltage - Collector Emitter Breakdown (Max) :

15V

Collector Current-Max (IC) :

0.21 A

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA, 8V

Terminal Position :

Single

Collector-Emitter Voltage-Max :

15 V

Mounting Type :

Surface Mount

Frequency - Transition :

5.5GHz

Number of Elements :

1

Package :

Bulk

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-243

Operating Temperature :

150°C (TJ)

Product Status :

Active

Highest Frequency Band :

L BAND

Number of Terminals :

3

Series :

Automotive, AEC-Q101

Surface Mount :

yes

Supplier Device Package :

PG-SOT89-4-2

Polarity/Channel Type :

NPN

Package Shape :

RECTANGULAR

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

120mA

Power - Max :

1W

Terminal Form :

Flat

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-F3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gain :

11.5dB