BFQ19SH6359XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector-Base Capacitance-Max :

1.35 pF

ECCN Code :

EAR99

Product Status :

Active

Reach Compliance Code :

Compliant

Terminal Form :

Flat

Gain :

11.5dB

Noise Figure (dB Typ @ f) :

1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz

Configuration :

Single

Operating Temperature :

150°C (TJ)

Package Shape :

RECTANGULAR

Current - Collector (Ic) (Max) :

120mA

Package :

Bulk

Case Connection :

COLLECTOR

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

15V

Highest Frequency Band :

L BAND

Transistor Application :

AMPLIFIER

Supplier Device Package :

PG-SOT89-4-2

Collector-Emitter Voltage-Max :

15 V

Mounting Type :

Surface Mount

Power - Max :

1W

Collector Current-Max (IC) :

0.21 A

Frequency - Transition :

5.5GHz

Additional Feature :

LOW NOISE

JESD-30 Code :

R-PSSO-F3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminals :

3

Factory Lead Time :

1 Week

Manufacturer :

Infineon Technologies AG

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA, 8V

Package / Case :

TO-243AA

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101

Polarity/Channel Type :

NPN

JEDEC-95 Code :

TO-243

Surface Mount :

yes

Transistor Type :

NPN

Terminal Position :

Single