BFQ19SH6359XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Series :

Automotive, AEC-Q101

Collector-Base Capacitance-Max :

1.35 pF

Terminal Form :

Flat

Additional Feature :

LOW NOISE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Power - Max :

1W

Highest Frequency Band :

L BAND

Number of Terminals :

3

ECCN Code :

EAR99

Terminal Position :

Single

Configuration :

Single

JEDEC-95 Code :

TO-243

Gain :

11.5dB

Polarity/Channel Type :

NPN

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA, 8V

Supplier Device Package :

PG-SOT89-4-2

Transistor Element Material :

SILICON

Collector Current-Max (IC) :

0.21 A

Package Shape :

RECTANGULAR

Case Connection :

COLLECTOR

Transistor Type :

NPN

Number of Elements :

1

Package / Case :

TO-243AA

Noise Figure (dB Typ @ f) :

1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz

Current - Collector (Ic) (Max) :

120mA

Manufacturer :

Infineon Technologies AG

Product Status :

Active

JESD-30 Code :

R-PSSO-F3

Package :

Bulk

Operating Temperature :

150°C (TJ)

Frequency - Transition :

5.5GHz

Transistor Application :

AMPLIFIER

Factory Lead Time :

1 Week

Collector-Emitter Voltage-Max :

15 V

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

15V