BFQ19SH6359

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Additional Feature :

LOW NOISE

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA, 8V

Configuration :

Single

Series :

Automotive, AEC-Q101

Package Shape :

RECTANGULAR

Terminal Form :

Flat

Manufacturer :

Infineon Technologies AG

Operating Temperature :

150°C (TJ)

Number of Terminals :

3

Surface Mount :

yes

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Highest Frequency Band :

L BAND

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

15V

Power - Max :

1W

Transistor Type :

NPN

Gain :

11.5dB

Collector-Base Capacitance-Max :

1.35 pF

Supplier Device Package :

PG-SOT89-4-2

Package / Case :

TO-243AA

Reach Compliance Code :

Compliant

Factory Lead Time :

1 Week

Transistor Application :

AMPLIFIER

Frequency - Transition :

5.5GHz

ECCN Code :

EAR99

JEDEC-95 Code :

TO-243

Current - Collector (Ic) (Max) :

120mA

Transistor Element Material :

SILICON

Noise Figure (dB Typ @ f) :

1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz

Collector-Emitter Voltage-Max :

15 V

Collector Current-Max (IC) :

0.21 A

Package :

Bulk

JESD-30 Code :

R-PSSO-F3

Terminal Position :

Single

Product Status :

Active